๐ป Microchannel Two-Phase Flow Boiling
Model high-heat-flux two-phase flow boiling in microchannels: two-phase HTC (htp), confinement number (Co), boiling number (Bo), chip wall temperature, and pressure drop.
โก Fortran 90 Engine
Double Precision (IEEE 754)
โ ISO / ASME Validated
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๐ฆ Fortran Code
10.8 KB
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Released
Jun 2026
โฑ๏ธ Latency
< 1 ms
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๐ป Silicon Microchannel Cold Plate & Confined Vapor Slugs
Real-time visual simulation: High-heat-flux microchannel array with Taylor vapor slugs sweeping through micro-fins๐ Configuration & Presets
๐ฅ๏ธ AI GPU Chip (R1233zd)
โก EV SiC Inverter (Water)
๐ก Radar GaN RF Power
โ๏ธ Micro-Evaporator Loop
Kandlikar Microchannel Formulation:
โข Confinement Number: Co = (1/Dh) โ(ฯ / (g (ฯL โ ฯV))) > 0.5
โข Boiling Number: Bo = qโณ / (G ยท hfg)
โข Two-Phase HTC: htp = max( hNBD, hCBD ) [W/(mยฒยทK)]
โข Wall Temperature: Twall = Tsat + (qโณ / htp) [ยฐC]
โข Confinement Number: Co = (1/Dh) โ(ฯ / (g (ฯL โ ฯV))) > 0.5
โข Boiling Number: Bo = qโณ / (G ยท hfg)
โข Two-Phase HTC: htp = max( hNBD, hCBD ) [W/(mยฒยทK)]
โข Wall Temperature: Twall = Tsat + (qโณ / htp) [ยฐC]
๐ Microchannel Boiling Results
๐ Output Summary
Two-Phase Boiling HTC (htp)
htp = 112,266 W/(mยฒยทK)
Base Wall Temp: 50.1 ยฐC (Tsat = 32.3 ยฐC) | Heat: 1280.0 W
Co = 4.16 (Microchannel)
Hydraulic Diameter (Dh)
0.600 mm
Microchannel regime
Boiling Number (Bo)
7.49e-4
qโณ / (G ยท hfg)
Two-Phase Pressure Drop
89.23 kPa
0.892 bar
Liquid-Only HTC (hLO)
17,353 W/(mยฒยทK)
Boiling enhancement = 6.5x
๐ Boiling HTC h_tp [W/(mยฒยทK)] vs Vapor Quality x
๐ Two-Phase Pressure Drop ฮP (kPa) vs Mass Flux G
================================================================= THERMOFLUIDCALC โ MICROCHANNEL FLOW BOILING (KANDLIKAR) REPORT ================================================================= Case Title : EV Silicon Carbide (SiC) Inverter Power Module Water Boiling Microchannel Array : w = 0.40 mm, h = 1.20 mm, L = 40.0 mm (Dh = 0.600 mm, N = 40) Operating Flow Conditions : Mass Flux G = 1200.0 kg/(m2.s), Base Heat Flux q" = 200.0 W/cm2 (2000.0 kW/m2) Thermodynamic State : Vapor Quality x = 0.15, Saturation Pressure = 1.50 bar (Tsat = 32.3 C) ----------------------------------------------------------------- CONFINEMENT NUMBER (Co) : 4.161 [Confined Microchannel Flow] BOILING NUMBER (Bo) : 7.491e-4 TWO-PHASE BOILING HTC (htp): 112,265.9 W/(m2.K) Liquid-Only Baseline HTC : 17,353.4 W/(m2.K) BASE WALL CHIP TEMPERATURE : 50.08 deg C (Overheat DeltaT = 17.81 C) Two-Phase Pressure Drop : 89.23 kPa (0.8923 bar) Total Dissipated Heat Power: 1280.00 W =================================================================
๐ Calculation Methodology & Microchannel Boiling Standards
Kandlikar Microchannel Correlation
Incorporates confinement effects ($Co$) and boiling number ($Bo$) to capture transition between nucleate bubble nucleation and thin-film evaporation:
htp = max( hNBD, hCBD )
Confinement Number Criterion
When $Co = \frac{1}{D_h}\sqrt{\frac{\sigma}{g(\rho_L - \rho_V)}} > 0.5$, bubble growth is constrained by channel walls, forming elongated Taylor slugs.
Key Engineering Assumptions
- Parallel rectangular microchannel heat sinks with uniform flow distribution.
- Saturated two-phase flow boiling regimes ($0.05 \le x \le 0.85$).
- Applicable to semiconductor electronics, high-power lasers, and compact heat exchangers.